Evolution of the electronic structures of NixSiy ordered systems: experimental and theoretical investigations
Author(s) -
M. Taguchi,
F. Le Normand,
J. Hommet,
Solenne Rey,
G. Schmerber,
J.C. Parlebas
Publication year - 2000
Publication title -
the european physical journal b
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.451
H-Index - 130
eISSN - 1434-6036
pISSN - 1434-6028
DOI - 10.1007/s100510070009
Subject(s) - nickel , x ray photoelectron spectroscopy , spectral line , electronic structure , tight binding , valence (chemistry) , electronic band structure , valence band , tin , silicon , condensed matter physics , materials science , binding energy , atomic physics , physics , band gap , quantum mechanics , nuclear magnetic resonance , metallurgy
International audienceWe study the change of the electronic structures of nickel silicides, Ni3Si and NiSi2, as well as nickel and silicon through the evolution of their valence band X-ray photoelectron spectra (v-XPS) both experimentally and theoretically. The experimental spectra are compared to the total and partial densities of states using tight-binding linear muffin-tin orbital method (TB-LMTO) in the atomic sphere approximation (ASA). Good agreement is found between theory and experiment
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