Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers | Zendy

J.S. Wang | Zendy; Gray Lin | Zendy; Ru-Shang Hsiao | Zendy; ChinSheng Yang | Zendy; C.M. Lai | Zendy; Chiu-Yueh Liang | Zendy; H.Y. Liu | Zendy; T.T. Chen | Zendy; Y.F. Chen | Zendy; J.Y. Chi | Zendy; J.F. Chen | Zendy

Open Access

Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

Author(s) -

J.S. Wang,

Gray Lin,

Ru-Shang Hsiao,

ChinSheng Yang,

C.M. Lai,

Chiu-Yueh Liang,

H.Y. Liu,

T.T. Chen,

Y.F. Chen,

J.Y. Chi,

J.F. Chen

Publication year - 2005

Publication title -

applied physics b

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.591

H-Index - 131

eISSN - 1432-0649

pISSN - 0946-2171

DOI - 10.1007/s00340-005-1975-2

Subject(s) - lasing threshold , materials science , optoelectronics , laser , quantum dot laser , quantum dot , continuous wave , waveguide , optics , wavelength , quantum optics , semiconductor laser theory , physics , semiconductor

High-power 3 μm-wide narrow-ridge-waveguide lasers with ten stacks of electronic vertically coupled InAs/GaAs quantum dots in the active region were demonstrated. Unlike that from conventional uncoupled InAs quantum dot lasers, a narrow lasing spectrum was observed because the carriers tunneled in the vertical direction. Continuous-wave operation in single lateral mode yielded a kink-free output power of 320 mW with an efficiency of 0.46 W/A , and a sensitivity of lasing wavelength to temperature of 0.28 nm/K.

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