Disordering kinetics in monocrystalline and epitaxial Si upon energy deposition induced by dual-beam ion irradiation
Author(s) -
A. Debelle,
G. Gutierrez,
Alexandre Boulle,
F. Garrido,
O. Najjar,
E. Olebunne,
F. Pallier,
C. Cabet,
L. Thomé
Publication year - 2021
Publication title -
applied physics a
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.485
H-Index - 149
eISSN - 1432-0630
pISSN - 0947-8396
DOI - 10.1007/s00339-021-04890-2
Subject(s) - rutherford backscattering spectrometry , fluence , irradiation , materials science , crystallinity , analytical chemistry (journal) , annealing (glass) , raman spectroscopy , epitaxy , ion beam , crystallography , thin film , ion , chemistry , optics , nanotechnology , nuclear physics , physics , organic chemistry , chromatography , layer (electronics) , composite material
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