High-field approximations of the energy-transport model for semiconductors with non-parabolic band structure | Zendy

Pierre Degond | Zendy; Sergio L. Cacciatori | Zendy

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High-field approximations of the energy-transport model for semiconductors with non-parabolic band structure

Author(s) -

Pierre Degond,

Sergio L. Cacciatori

Publication year - 2001

Publication title -

zeitschrift für angewandte mathematik und physik

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.988

H-Index - 59

eISSN - 1420-9039

pISSN - 0044-2275

DOI - 10.1007/pl00001583

Subject(s) - semiconductor , thermal diffusivity , diffusion , energy transport , field (mathematics) , path (computing) , energy (signal processing) , parabolic partial differential equation , physics , mathematical analysis , statistical physics , mathematics , thermodynamics , quantum mechanics , partial differential equation , engineering physics , pure mathematics , computer science , programming language

An asymptotic analysis of the energy-transport equations for semiconductors with the scaled energy relaxation time as small parameter is performed. Using a variant of the Chapman-Enskog method, high-field drift-diffusion models are derived. Furthermore, the dependence of the macroscopic parameters such as the diffusivity are investigated for parabolic and non-parabolic band approximations (in the sense of Kane). Explicit expressions of the physical parameters are obtained.

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