Effect of curing conditions of a poly(4-vinylphenol)gate dielectric on the performance of a pentacene-based thin film transistor | Zendy

Min-Kyu Hwang | Zendy; Hwa Sung Lee | Zendy; Yunseok Jang | Zendy; Jeong Ho Cho | Zendy; Shichoon Lee | Zendy; Do Hwan Kim | Zendy; Cho Kilwon | Zendy

Open Access

Effect of curing conditions of a poly(4-vinylphenol)gate dielectric on the performance of a pentacene-based thin film transistor

Author(s) -

Min-Kyu Hwang,

Hwa Sung Lee,

Yunseok Jang,

Jeong Ho Cho,

Shichoon Lee,

Do Hwan Kim,

Cho Kilwon

Publication year - 2009

Publication title -

macromolecular research

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.491

H-Index - 49

eISSN - 2092-7673

pISSN - 1598-5032

DOI - 10.1007/bf03218886

Subject(s) - pentacene , materials science , dielectric , gate dielectric , thin film transistor , nanochemistry , optoelectronics , curing (chemistry) , organic field effect transistor , transistor , field effect transistor , composite material , nanotechnology , voltage , electrical engineering , layer (electronics) , engineering

We improved the performance of pentacene-based thin film transistors by changing the curing environment of poly(4-vinylphenol) (PVP) gate dielectrics, while keeping the dielectric constant the same. The field-effect mobility of the pentacene TFTs constructed using the vacuum cured PVP was higher than that of the device based on the Ar flow cured gate dielectric, possibly due to the higher crystalline perfection of the pentacene films. The present results demonstrated that the curing conditions used can markedly affect the surface energy of polymer gate dielectrics, thereby affecting the field-effect mobility of TFTs based on those dielectrics.

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