Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium | Zendy

Suma Gurumurthy | Zendy; K. S. R. Koteswara Rao | Zendy; A. K. Sreedhar | Zendy; H. L. Bhat | Zendy; B. S. Sundersheshu | Zendy; R. Bagai | Zendy; Vikram Kumar | Zendy

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Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium

Author(s) -

Suma Gurumurthy,

K. S. R. Koteswara Rao,

A. K. Sreedhar,

H. L. Bhat,

B. S. Sundersheshu,

R. Bagai,

Vikram Kumar

Publication year - 1994

Publication title -

bulletin of materials science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.35

H-Index - 72

eISSN - 0973-7669

pISSN - 0250-4707

DOI - 10.1007/bf02757582

Subject(s) - materials science , photoluminescence , cadmium telluride photovoltaics , indium , stoichiometry , doping , vacancy defect , tellurium , acceptor , conduction band , cadmium , analytical chemistry (journal) , condensed matter physics , optoelectronics , chemistry , metallurgy , electron , physics , chromatography , quantum mechanics

Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at ∼ 1·14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.

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