Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire | Zendy

Dhananjay Kumar | Zendy; K. M. Satyalakshmi | Zendy; S. Sundar Manoharan | Zendy; M. S. Hegde | Zendy

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Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Author(s) -

Dhananjay Kumar,

K. M. Satyalakshmi,

S. Sundar Manoharan,

M. S. Hegde

Publication year - 1994

Publication title -

bulletin of materials science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.35

H-Index - 72

eISSN - 0973-7669

pISSN - 0250-4707

DOI - 10.1007/bf02757546

Subject(s) - materials science , sapphire , pulsed laser deposition , thin film , doping , substrate (aquarium) , analytical chemistry (journal) , critical current , superconductivity , laser , optoelectronics , condensed matter physics , nanotechnology , optics , oceanography , physics , chemistry , chromatography , geology

Microstructural and superconducting properties of YBa2Cu3O7−x thin films grownin situ on bare sapphire by pulsed laser deposition using YBa2Cu3O7−x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730°C on sapphire have shown very significant improvement over the undoped YBa2Cu3O7−x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1·2×106 A/cm2 at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.

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