Oxidation kinetics of reaction-sintered silicon carbide | Zendy

Omprakash Chakrabarti | Zendy; J. Mukerji | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Oxidation kinetics of reaction-sintered silicon carbide

Author(s) -

Omprakash Chakrabarti,

J. Mukerji

Publication year - 1993

Publication title -

bulletin of materials science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.35

H-Index - 72

eISSN - 0973-7669

pISSN - 0250-4707

DOI - 10.1007/bf02746043

Subject(s) - materials science , activation energy , silicon carbide , kinetics , diffusion , carbide , chemical kinetics , atmospheric temperature range , chemical engineering , oxide , silicon , oxidation process , oxygen , analytical chemistry (journal) , metallurgy , chemistry , thermodynamics , organic chemistry , physics , quantum mechanics , engineering

The oxidation kinetics of reaction-sintered silicon carbide has been studied over the temperature range 1200° to 1350°C. The material has a bulk density of 3·00 g/cm3 and the unreacted Si content is 22·5% (v/v). The activation energy for oxidation is 28·75 ± 2·61 kcal/mol. It is proposed that the diffusion of oxygen through the growing oxide film is the rate-controlling process.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research