Nickel silicide contact for silicon solar cells
Author(s) -
S. Bandopadhyay,
Utpal Gangopadhyay,
K. Mukhopadhyay,
H. Saha,
A.P. Chatterjee
Publication year - 1992
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02745298
Subject(s) - materials science , silicide , silicon , nickel , metallurgy , x ray photoelectron spectroscopy , equivalent series resistance , solar cell , contact resistance , optoelectronics , nanotechnology , layer (electronics) , chemical engineering , electrical engineering , voltage , engineering
Electroless nickel metallization on textured front surface is carried out to fabricate large area (13%) efficient silicon solar cells. It is established through XPS analysis that NiSi is formed at the front grid contact on the texturized surface at relatively low temperature leading to a low value of series resistance of the solar cells.
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