Current-voltage characteristics of Ag, Al, Ni-(n)CdTe junctions | Zendy

P. C. Sarmah | Zendy; A. Rahman | Zendy

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Current-voltage characteristics of Ag, Al, Ni-(n)CdTe junctions

Author(s) -

P. C. Sarmah,

A. Rahman

Publication year - 2001

Publication title -

bulletin of materials science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.35

H-Index - 72

eISSN - 0973-7669

pISSN - 0250-4707

DOI - 10.1007/bf02708640

Subject(s) - materials science , equivalent series resistance , schottky barrier , cadmium telluride photovoltaics , sputtering , schottky diode , doping , diode , layer (electronics) , optoelectronics , metal , voltage , thin film , nanotechnology , metallurgy , electrical engineering , engineering

Schottky barriers of Ag, Al, Ni-(n)CdTe structures have been prepared and studied. The films were prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are greater than unity and barrier height varies from 0.6–0.7 eV and are affected by room illumination. Photovoltaic effect of these junctions was very poor and fill factor below 0.4. Low doping concentration, high defect density, presence of an interfacial layer and presence of high series resistance are perceived to affect theJ—V characteristic.

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