Surface characterization of sol-gel derived indium tin oxide films on glass
Author(s) -
P.K. Biswas,
Arijit De,
Laxmikanta Dua,
L. Chkoda
Publication year - 2006
Publication title -
bulletin of materials science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.35
H-Index - 72
eISSN - 0973-7669
pISSN - 0250-4707
DOI - 10.1007/bf02706504
Subject(s) - materials science , x ray photoelectron spectroscopy , tin , amorphous solid , indium tin oxide , sputtering , indium , sol gel , metal , thin film , oxide , analytical chemistry (journal) , chemical engineering , inorganic chemistry , metallurgy , nanotechnology , crystallography , chemistry , chromatography , engineering
Indium tin oxide (ITO) films containing different In : Sn atomic ratios, viz. 90 :10, 70 :30, 50 : 50, 30 :70, were deposited on two types of glass substrates by sol-gel spinning technique. XPS analysis of the films was done under as-received and after-sputtering conditions. The narrow spectra obtained for the Na1s, In3d, Sn3d and O1s have been discussed. Oxygen was found to exist in three chemical environments in as-received samples due to the existence of (i) environmental hydroxyl (-OH) group, (ii) crystalline ITO and (iii) amorphous ITO; but it was in two chemical environments, (ii) and (iii), after surface cleaning by sputtering. The presence of both tin metal and tin oxides was confirmed by the peak analysis of Sn3d. The In : Sn atomic ratio taken in the precursor sols did not change considerably in the case of developed films of low Sn content, but considerable change was observed in the films having high Sn content.
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