Open AccessFast neutron radiation damage effects on high resistivity silicon junction detectors
Author(s) -
Zheng Li,
H.W. Kraner
Publication year - 1992
Publication title -
journal of electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.422
H-Index - 99
eISSN - 1543-186X
pISSN - 0361-5235
DOI - 10.1007/bf02655599
Subject(s) - fluence , materials science , silicon , irradiation , neutron , neutron flux , electrical resistivity and conductivity , radiation damage , radiation , capacitance , radiation hardening , doping , ionizing radiation , optoelectronics , particle detector , analytical chemistry (journal) , optics , nuclear physics , chemistry , physics , electrode , chromatography , quantum mechanics
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