Open AccessRapid thermal annealing of neutron transmutation doped silicon
Author(s) -
E.M. Lawson,
P. J. Lee
Publication year - 1989
Publication title -
journal of electronic materials
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.422
H-Index - 99
eISSN - 1543-186X
pISSN - 0361-5235
DOI - 10.1007/bf02655336
Subject(s) - wafer , annealing (glass) , materials science , nuclear transmutation , doping , silicon , deep level transient spectroscopy , electrical resistivity and conductivity , optoelectronics , solid state physics , analytical chemistry (journal) , neutron , composite material , chemistry , condensed matter physics , nuclear physics , electrical engineering , physics , chromatography , engineering
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