Performance and materials aspects of Ge:Be photoconductors | Zendy

N. M. Haegel | Zendy; E. E. Häller | Zendy; P.N. Luke | Zendy

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Performance and materials aspects of Ge:Be photoconductors

Author(s) -

N. M. Haegel,

E. E. Häller,

P.N. Luke

Publication year - 1983

Publication title -

international journal of infrared and millimeter waves

Language(s) - English

Resource type - Journals

eISSN - 1572-9559

pISSN - 0195-9271

DOI - 10.1007/bf01009319

Subject(s) - responsivity , noise equivalent power , quantum efficiency , detector , photon , optoelectronics , wavelength , materials science , germanium , photodetector , torr , homojunction , optics , millimeter , susceptor , physics , silicon , nanotechnology , layer (electronics) , thermodynamics , heterojunction , epitaxy

Ge:Be photoconductors have been developed for low photon background applications in the 30–50 µm wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Berylliumdoped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of ~ 10-6 torr. We report an optimum detective quantum efficiency of 46% at a background flux of 1.5×108 photons/second (7×10-13 W). Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.

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