Measurement of the tunnel rate in SIS' tunnel junctions as function of bias voltage | Zendy

H. Kraus | Zendy; M. Gutsche | Zendy; P. Hettl | Zendy; J. Jochum | Zendy; B. Kemmather | Zendy

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Measurement of the tunnel rate in SIS' tunnel junctions as function of bias voltage

Author(s) -

H. Kraus,

M. Gutsche,

P. Hettl,

J. Jochum,

B. Kemmather

Publication year - 1996

Publication title -

journal of superconductivity

Language(s) - English

Resource type - Journals

eISSN - 1572-9605

pISSN - 0896-1107

DOI - 10.1007/bf00728310

Subject(s) - detector , superconductivity , biasing , tunnel junction , semiconductor , signal (programming language) , voltage , materials science , condensed matter physics , optoelectronics , electrode , quantum tunnelling , physics , optics , computer science , quantum mechanics , programming language

Cryogenic detectors with superconducting tunnel junctions can provide an energy resolution improved by at least one order of magnitude compared with standard semiconductor detectors. While the detection principle was already demonstrated many years ago, the past years were dedicated to the transition from the laboratory sample to practical detectors. Our most favored detector design gives rise to tunnel junctions with electrodes of unequal energy gaps. In such hetero tunnel junctions bias conditions can be established which cause a negative signal current. We report the experimental verification of this effect, and we discuss the yield of charge signal of cryogenic detectors based upon superconducting tunnel junctions. © 1996 Plenum Publishing Corporation

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