Growth of epitaxial silicon layers by ion beam sputtering | Zendy

B. A. Unvala | Zendy; K. Pearmain | Zendy

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Growth of epitaxial silicon layers by ion beam sputtering

Author(s) -

B. A. Unvala,

K. Pearmain

Publication year - 1970

Publication title -

journal of materials science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.813

H-Index - 177

eISSN - 1573-4803

pISSN - 0022-2461

DOI - 10.1007/bf00558187

Subject(s) - materials science , silicon , epitaxy , sputtering , ion beam , ion , optoelectronics , thin film , mineralogy , beam (structure) , nanotechnology , optics , layer (electronics) , chemistry , physics , organic chemistry

References 1. J . STEIGMAN, W. S I tOCKL E Y, and r. c. NIX, Phys. Rev. 56 (1939) 13. 2. c. LEYMONIE, "Radioactive Tracers in Physical Metallurgy". (J. Wiley and Sons, Inc., New York, 1963), pp. 54, 57. 3. T. J. RENOOF, Phil. Mag. 8 (1964) 781. 4. G. C. K U C Z Y N S K I and R. J. L A N D A U E R , J. AppL Phys. 22 (1951) 952. 5. A. ANDREWS and s. DUSHMAN, 3". Phys. Chem. 29 (1925) 462. 6. a. GOLDSTEIN, Rev. Sci. Instr. 28 (1957) 289. 7. C. E. G R O U T H A M E L a n d c . E. J O H N S O N , Analyt. Chem. 26 (1954) 1284. 8. c. P. BtrHSM~R, Ph.D. Thesis, State University of New York, College of Ceramics, Alfred, NY (1968).

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