Nano-Electromechanical Systems: Displacement Detection and the Mechanical Single Electron Shuttle
Author(s) -
Robert H. Blick,
Florian W. Beil,
Eva M. Höhberger,
Artur Erbe,
Christoph Weiß
Publication year - 2001
Publication title -
lecture notes in physics
Language(s) - English
Resource type - Book series
SCImago Journal Rank - 0.136
H-Index - 68
eISSN - 1616-6361
pISSN - 0075-8450
DOI - 10.1007/3-540-45532-9_12
Subject(s) - resonator , pendulum , capacitive sensing , displacement (psychology) , electron , materials science , physics , capacitive coupling , harmonics , quantum tunnelling , optoelectronics , acoustics , electrical engineering , engineering , voltage , psychology , quantum mechanics , psychotherapist
For an introduction to nano-electromechanical systems we present measurements on nanomechanical resonators operating in the radio frequency range. We discuss in detail two different schemes of displacement detection for mechanical resonators, namely conventional reflection measurements of a probing signal and direct detection by capacitive coupling via a gate electrode. For capacitive detection we employ an on-chip preamplifier, which enables direct measurements of the resonator’s displacement. We observe that the mechanical quality factor of the resonator depends on the detection technique applied, which is verified in model calculations and report on the detection of sub-harmonics. In the second part we extend our investigations to include transport of single electrons through an electron island on the tip of a nanomachined mechanical pendulum. The pendulum is operated by applying a modulating electromagnetic field in the range of 1–200 MHz, leading to mechanical oscillations between two laterally integrated source and drain contacts. Forming tunneling barriers the metallic tip shuttles single electrons from source to drain. The resulting tunneling current shows distinct features corresponding to the discrete mechanical eigenfrequencies of the pendulum.We report on measurements covering the temperature range from 300 K down to 4.2 K. The transport properties of the device are compared in detail to model calculations based on a Master-equation approach.
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