Modeling the Point‐Spread Function in Helium‐Ion Lithography | Zendy

Winston Donald | Zendy; Ferrera J. | Zendy; Battistella L. | Zendy; Vladár A. E. | Zendy; Berggren K. K. | Zendy

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Modeling the Point‐Spread Function in Helium‐Ion Lithography

Author(s) -

Winston Donald,

Ferrera J.,

Battistella L.,

Vladár A. E.,

Berggren K. K.

Publication year - 2011

Publication title -

scanning

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.359

H-Index - 47

eISSN - 1932-8745

pISSN - 0161-0457

DOI - 10.1002/sca.20290

Subject(s) - stopping power , helium , ion , lithography , monte carlo method , range (aeronautics) , computational physics , electron beam lithography , physics , atomic physics , ion beam lithography , materials science , optics , ion beam , resist , nanotechnology , mathematics , statistics , quantum mechanics , layer (electronics) , composite material

Summary We present here a hybrid approach to modeling helium‐ion lithography that combines the power and ease‐of‐use of the Stopping and Range of Ions in Matter (SRIM) software with the results of recent work simulating secondary electron (SE) yield in helium‐ion microscopy. This approach traces along SRIM‐produced helium‐ion trajectories, generating and simulating trajectories for SEs using a Monte Carlo method. We found, both through simulation and experiment, that the spatial distribution of energy deposition in a resist as a function of radial distance from beam incidence, i.e. the point spread function, is not simply a sum of Gauss functions. SCANNING 33: 121–128, 2012. © 2011 Wiley Periodicals, Inc.

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