Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth | Zendy

Sun Xiaoxiao | Zendy; Wang Ping | Zendy; Sheng Bowen | Zendy; Wang Tao | Zendy; Chen Zhaoying | Zendy; Gao Kang | Zendy; Li Mo | Zendy; Zhang Jian | Zendy; Ge Weikun | Zendy; Arakawa Yasuhiko | Zendy; Shen Bo | Zendy; Holmes Mark | Zendy; Wang Xinqiang | Zendy

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Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth

Author(s) -

Sun Xiaoxiao,

Wang Ping,

Sheng Bowen,

Wang Tao,

Chen Zhaoying,

Gao Kang,

Li Mo,

Zhang Jian,

Ge Weikun,

Arakawa Yasuhiko,

Shen Bo,

Holmes Mark,

Wang Xinqiang

Publication year - 2019

Publication title -

quantum engineering

Language(s) - English

Resource type - Journals

ISSN - 2577-0470

DOI - 10.1002/que2.20

Subject(s) - optoelectronics , photon , materials science , quantum , physics , optics , quantum mechanics

We demonstrate high‐purity single‐photon emission from a high‐quality and further confined InGaN (indium gallium nitride) quantum disc in a GaN (gallium nitride) nanowire fabricated by an unconventional and versatile reverse‐reaction fabrication method. This further confined structure exhibits single‐photon emission with a g (2) (0) value of 0.11 at 8 K with a sub‐nanosecond radiative lifetime. The formation of the further confined structure using this versatile reverse‐reaction fabrication approach overcomes many limitations in conventional self‐assembled III‐nitride nanowires and, thus, exhibits a strong potential application as a high‐purity single‐photon source.

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