Open AccessSingle‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth
Author(s) -
Sun Xiaoxiao,
Wang Ping,
Sheng Bowen,
Wang Tao,
Chen Zhaoying,
Gao Kang,
Li Mo,
Zhang Jian,
Ge Weikun,
Arakawa Yasuhiko,
Shen Bo,
Holmes Mark,
Wang Xinqiang
Publication year - 2019
Publication title -
quantum engineering
Language(s) - English
Resource type - Journals
ISSN - 2577-0470
DOI - 10.1002/que2.20
Subject(s) - materials science , fabrication , gallium nitride , optoelectronics , indium gallium nitride , indium , nitride , nanowire , indium nitride , gallium , photoluminescence , nanosecond , photon , wide bandgap semiconductor , spontaneous emission , nanotechnology , optics , laser , physics , medicine , alternative medicine , layer (electronics) , pathology , metallurgy
Abstract We demonstrate high‐purity single‐photon emission from a high‐quality and further confined InGaN (indium gallium nitride) quantum disc in a GaN (gallium nitride) nanowire fabricated by an unconventional and versatile reverse‐reaction fabrication method. This further confined structure exhibits single‐photon emission with a g (2) (0) value of 0.11 at 8 K with a sub‐nanosecond radiative lifetime. The formation of the further confined structure using this versatile reverse‐reaction fabrication approach overcomes many limitations in conventional self‐assembled III‐nitride nanowires and, thus, exhibits a strong potential application as a high‐purity single‐photon source.