Open AccessAtomic scale investigation of Si and Ce‐rich nanoclusters in Ce‐doped SiO 1.5 thin films
Author(s) -
Beainy G.,
WeimmerskirchAubatin J.,
Stoffel M.,
Vergnat M.,
Rinnert H.,
Etienne A.,
Pareige P.,
Talbot E.
Publication year - 2015
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.201510081
Subject(s) - atom probe , nanoclusters , photoluminescence , materials science , doping , luminescence , atom (system on chip) , thin film , nanocrystal , analytical chemistry (journal) , cerium , evaporation , nanoscopic scale , nanotechnology , optoelectronics , chemistry , metallurgy , embedded system , physics , chromatography , transmission electron microscopy , computer science , thermodynamics
The optical properties and the nanoscale structure of Ce‐doped SiO 1.5 thin films elaborated by evaporation were investigated by photoluminescence and atom probe tomography. Strong Ce‐related blue luminescence is observed on the 1100 °C annealed sample. Atom probe tomography experiments give evidence of the formation of a cerium silicate having a stoichiometry compatible with Ce 2 Si 2 O 7 . Moreover, we further observe the formation of pure Si nanocrystals (Si‐ncs) which results from the phase separation of the SiO 1.5 film. No optical signal from Si‐ncs was observed at least for the 3% Ce‐doped SiO 1.5 film considered in this study. We analyze the size distribution of both Si‐ncs and Ce 2 Si 2 O 7 particles. Finally, the Si and Ce diffusion coefficients were estimated based on atom probe tomography characterizations. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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