Growth mechanism of planar or nanorod structured tungsten oxide thin films deposited via aerosol assisted chemical vapour deposition (AACVD) | Zendy

Ling Min | Zendy; Blackman Chris | Zendy

Open Access

Growth mechanism of planar or nanorod structured tungsten oxide thin films deposited via aerosol assisted chemical vapour deposition (AACVD)

Author(s) -

Ling Min,

Blackman Chris

Publication year - 2015

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.201510047

Subject(s) - chemical vapor deposition , tungsten , thin film , nucleation , materials science , substrate (aquarium) , nanorod , oxide , chemical engineering , nanotechnology , chemistry , metallurgy , organic chemistry , engineering , oceanography , geology

Aerosol assisted chemical vapour deposition (AACVD) is used to deposit tungsten oxide thin films from tungsten hexacarbonyl (W(CO) 6 ) at 339 to 358 °C on quartz substrate. The morphologies of as‐deposited thin films, which are comprised of two phases (W 25 O 73 and W 17 O 47 ), vary from planar to nanorod (NR) structures as the distance from the inlet towards the outlet of the reactor is traversed. This is related to variation of the actual temperature on the substrate surface (ΔT = 19 °C), which result in a change in growth mode due to competition between growth rate (perpendicular to substrate) and nucleation rate (parallel to substrate). When the ratio of perpendicular growth rate to growth rate contributed by nucleation is higher than 7.1, the as‐deposited tungsten oxide thin film forms as NR. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research