Accurate measurement of atomic segregation to grain boundaries or to planar faults by analytical transmission electron microscopy | Zendy

Walther Thomas | Zendy

Open Access

Accurate measurement of atomic segregation to grain boundaries or to planar faults by analytical transmission electron microscopy

Author(s) -

Walther Thomas

Publication year - 2015

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.201400121

Subject(s) - materials science , transmission electron microscopy , silicon , dopant , gallium arsenide , epitaxy , grain boundary , molecular beam epitaxy , germanium , optoelectronics , doping , nanotechnology , metallurgy , layer (electronics) , microstructure

A method of analytical transmission electron microscopy is described that has been successfully applied to study dopant segregation to inversion domain boundaries in zinc oxide, to quantify the thicknesses of sub‐nanometre thin epitaxial layers grown by molecular beam epitaxy of indium arsenide (InAs) on gallium arsenide (GaAs) or silicon/germanium on silicon and proved the absence of any gettering of As or Ga dopants at Sigma=3 {111} grain boundaries in silicon, with a precision of <1 atom/nm 2 in each case. Here, the case study of InAs/GaAs is reviewed in detail and the procedure for quantification of full hyperspectral data sets is explained. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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