Open AccessEffect of thermal annealing on defects in post‐growth hydrogenated GaNP
Author(s) -
Dagnelund D.,
Tu C. W.,
Polimeni A.,
Capizzi M.,
Chen W. M.,
Buyanova I. A.
Publication year - 2013
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.201200353
Subject(s) - annealing (glass) , photoluminescence , materials science , hydrogen , dissociation (chemistry) , thermal , recombination , optoelectronics , paramagnetism , analytical chemistry (journal) , nuclear magnetic resonance , condensed matter physics , chemistry , metallurgy , physics , biochemistry , gene , organic chemistry , chromatography , meteorology
Effect of thermal annealing on paramagnetic centers in post‐growth hydrogenated GaN 0.0081 P 0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga‐interstitial (Ga i ) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near‐band edge radiative recombination. Annealing at 400 ºC in Ar‐ambient is found to cause quenching of the Ga i ‐related ODMR signals that were activated by post‐growth hydrogenation. We tentatively ascribe this effect to dissociation of the H‐Ga i complexes and subsequent out‐diffusion of H. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)