Ab‐initio  study of silicon nanowires | Zendy

Karazhanov Smagul | Zendy; Marstein Erik | Zendy; Holt Arve | Zendy

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Ab‐initio study of silicon nanowires

Author(s) -

Karazhanov Smagul,

Marstein Erik,

Holt Arve

Publication year - 2012

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.201100758

Subject(s) - nanowire , silicon , conduction band , silicon nanowires , materials science , condensed matter physics , ab initio , density functional theory , valence band , valence (chemistry) , direct and indirect band gaps , electronic band structure , semimetal , nanotechnology , band gap , optoelectronics , computational chemistry , chemistry , physics , quantum mechanics , electron

Four different size nanowires of Si have been studied by the density functional theory. We have shown that distinct from the bulk silicon with indirect band structure the one of the silicon nanowires is direct. Both valence band maximum and conduction band minimum are located at the Γ point. Optical properties of the nanowires have been studied. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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