Study of carrier dynamics and radiative efficiency in InGaN/GaN LEDs with Monte Carlo method | Zendy

Lu ILin | Zendy; Wu YuhRenn | Zendy; Singh Jasprit | Zendy

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Study of carrier dynamics and radiative efficiency in InGaN/GaN LEDs with Monte Carlo method

Author(s) -

Lu ILin,

Wu YuhRenn,

Singh Jasprit

Publication year - 2011

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.201001054

Subject(s) - monte carlo method , radiative transfer , light emitting diode , leakage (economics) , quantum efficiency , materials science , indium , optoelectronics , non radiative recombination , dislocation , trapping , charge carrier density , carrier lifetime , doping , semiconductor , physics , optics , silicon , semiconductor materials , ecology , statistics , mathematics , biology , economics , composite material , macroeconomics

In this paper, we have applied the Monte Carlo method to study carrier dynamics in InGaN quantum well. Vertical and lateral transport and its impact on device radiative efficiency is studied for different In compositions, dislocation densities, temperatures, and carrier densities. Our results show that the non‐radiative recombination caused by the defect trapping plays a dominating role for higher indium composition and this limits the internal quantum efficiency (IQE). For lower indium composition cases, carrier leakage plays some role in the mid to high injection conditions and carrier leakage is strong in very high carrier density in all cases. Our results suggest that reducing the trap density and QCSE are still the key factors to improve the IQE. The paper examines the relative roles of leakage and non‐radiative processes on IQE. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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