Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications | Zendy

Forster Maxime | Zendy; Fourmond Erwann | Zendy; Einhaus Roland | Zendy; Lauvray Hubert | Zendy; Kraiem Jed | Zendy; Lemiti Mustapha | Zendy

Open Access

Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications

Author(s) -

Forster Maxime,

Fourmond Erwann,

Einhaus Roland,

Lauvray Hubert,

Kraiem Jed,

Lemiti Mustapha

Publication year - 2011

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.201000330

Subject(s) - ingot , silicon , doping , materials science , carrier lifetime , boron , gallium , impurity , raw material , crystallization , degradation (telecommunications) , solar cell , optoelectronics , metallurgy , chemical engineering , electronic engineering , chemistry , organic chemistry , alloy , engineering

In this paper, we investigate gallium co‐doping during CZ crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p‐type ingot with high resistivity despite high B and P contents in the silicon. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier mobility measurements indicate that this material is suitable for the realization of solar cells with comparable efficiencies to standard material. Significant light‐induced degradation of minority carrier lifetime is however revealed to occur in this material. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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