Open AccessElectrically active centers introduced in p‐type Si by rapid thermal processing
Author(s) -
Tang C. K.,
Lund E.,
Monakhov E. V.,
Mayandi J.,
Holt A.,
Svensson B. G.
Publication year - 2011
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.201000263
Subject(s) - silicon , annealing (glass) , thermal , boron , thermal stability , deep level transient spectroscopy , valence band , materials science , doping , activation energy , valence (chemistry) , analytical chemistry (journal) , kinetics , optoelectronics , chemistry , band gap , thermodynamics , physics , composite material , organic chemistry , chromatography , quantum mechanics
Electrically active defects introduced in boron‐doped silicon by rapid thermal annealing were studied using deep level transient spectroscopy. Thermal treatment at 1000 °C for 2 minutes induced two hole traps with energy levels at 0.3 eV and 0.4 eV above the valence band edge and concentration between 5 × 10 12 and 5 × 10 13 cm –3 . Both defects exhibit Poole‐Frenkel effect and show thermal stability up to 650 °C. Depth profiling reveals that these defects extend more than 3 m into the bulk and decrease in concentration towards the surface. The origin and formation kinetics of these centers will be discussed and compared with theoretical predictions in the literature. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)