Electrically active centers introduced in p‐type Si by rapid thermal processing | Zendy

Tang C. K. | Zendy; Lund E. | Zendy; Monakhov E. V. | Zendy; Mayandi J. | Zendy; Holt A. | Zendy; Svensson B. G. | Zendy

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Electrically active centers introduced in p‐type Si by rapid thermal processing

Author(s) -

Tang C. K.,

Lund E.,

Monakhov E. V.,

Mayandi J.,

Holt A.,

Svensson B. G.

Publication year - 2011

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.201000263

Subject(s) - silicon , annealing (glass) , thermal , boron , thermal stability , deep level transient spectroscopy , valence band , materials science , doping , activation energy , valence (chemistry) , analytical chemistry (journal) , kinetics , optoelectronics , chemistry , band gap , thermodynamics , physics , composite material , organic chemistry , chromatography , quantum mechanics

Electrically active defects introduced in boron‐doped silicon by rapid thermal annealing were studied using deep level transient spectroscopy. Thermal treatment at 1000 °C for 2 minutes induced two hole traps with energy levels at 0.3 eV and 0.4 eV above the valence band edge and concentration between 5 × 10 12 and 5 × 10 13 cm –3 . Both defects exhibit Poole‐Frenkel effect and show thermal stability up to 650 °C. Depth profiling reveals that these defects extend more than 3 m into the bulk and decrease in concentration towards the surface. The origin and formation kinetics of these centers will be discussed and compared with theoretical predictions in the literature. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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