Raman study of doped‐ZnO thin films grown by rf sputtering | Zendy

Cerqueira M. F. | Zendy; Rolo A. G. | Zendy; Viseu T. | Zendy; Ayres de Campos J. | Zendy; de LacerdaArôso T. | Zendy; Oliveira F. | Zendy; Vasilevskiy M. I. | Zendy; Alves E. | Zendy

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Raman study of doped‐ZnO thin films grown by rf sputtering

Author(s) -

Cerqueira M. F.,

Rolo A. G.,

Viseu T.,

Ayres de Campos J.,

de LacerdaArôso T.,

Oliveira F.,

Vasilevskiy M. I.,

Alves E.

Publication year - 2010

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200983747

Subject(s) - raman spectroscopy , doping , impurity , materials science , sputter deposition , sputtering , annealing (glass) , analytical chemistry (journal) , phonon , thin film , optoelectronics , condensed matter physics , chemistry , nanotechnology , optics , metallurgy , physics , organic chemistry , chromatography

A Raman spectroscopy study of doped versus undoped ZnO layers is presented. The layers were grown by RF magnetron sputtering and the doping with Al, Sb and Mn was achieved by ion implantation with subsequent annealing. First‐order Raman response measured under λ=488 nm excitation is discussed. It is shown that doping with any of the impurities used in this work produces a strong enhancement of the longitudinal optical (LO) phonon band, which is attributed to the intra‐band Fröhlich mechanism. In addition, doping with Mn results in an extra mode located at 530 cm ‐1 , tentatively attributed to a local vibrational mode of Mn substituting Zn in the lattice sites. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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