Photoluminescence and photoluminescence excitation spectra from AlN doped with Gd 3+
Author(s) -
Fukui Kazutoshi,
Sawai Syun,
Ito Tomoharu,
Emura Shuichi,
Araki Tsutomu,
Suzuki Akira
Publication year - 2010
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.200983538
Subject(s) - photoluminescence , spectral line , cathodoluminescence , emission spectrum , photoluminescence excitation , materials science , doping , synchrotron radiation , band gap , analytical chemistry (journal) , luminescence , chemistry , physics , optics , optoelectronics , chromatography , astronomy
The photoluminescence (PL) spectra from Al 0.98 Gd 0.02 N and Al 0.87 Gd 0.13 N consisting of Gd 3+ related 3.95 eV sharp emission lines and other bands, and the PL excitation (PLE) spectra from 3 to 7 eV have been investigated by using a highly linear polarized synchrotron radiation light source. The Gd related 3.95 eV sharp lines in the PL spectra are similar to those in other cathodoluminescence (CL) and PL research works. However, the broad emission bands around 3.95 eV lines which are normally found in other CL works are not observed. Other broad emission bands are clearly observed in the energy region of 1.5 ∼ 3.5 eV. PLE spectra monitored at both the 3.95 eV sharp line and the broad emission band of Al 0.98 Gd 0.02 N clearly indicate that these emission processes are host excitations which are reflected by an AlN‐like band structure and crystalline anisotropy. On the other hand, the PLE and optical reflectance spectra of Al 0.87 Gd 0.13 N reveal an unclear band structure with a long band tail to in the lower energy side (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom