Light emitting diodes on silicon substrates: preliminary results | Zendy

Bondi Alexandre | Zendy; Guo Weiming | Zendy; Pedesseau Laurent | Zendy; BoyerRichard Soline | Zendy; Folliot Hervé | Zendy; Chevalier Nicolas | Zendy; Cornet Charles | Zendy; Letoublon Antoine | Zendy; Durand Olivier | Zendy; Labbé Chistophe | Zendy; Gicquel Maud | Zendy; Lecorre Alain | Zendy; Even Jacky | Zendy; Loualiche Slimane | Zendy; Moreac Alain | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Light emitting diodes on silicon substrates: preliminary results

Author(s) -

Bondi Alexandre,

Guo Weiming,

Pedesseau Laurent,

BoyerRichard Soline,

Folliot Hervé,

Chevalier Nicolas,

Cornet Charles,

Letoublon Antoine,

Durand Olivier,

Labbé Chistophe,

Gicquel Maud,

Lecorre Alain,

Even Jacky,

Loualiche Slimane,

Moreac Alain

Publication year - 2009

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200881728

Subject(s) - silicon , quantum well , photoluminescence , optoelectronics , superlattice , materials science , molecular beam epitaxy , raman spectroscopy , photonics , diode , epitaxy , phonon , condensed matter physics , optics , nanotechnology , physics , laser , layer (electronics)

III‐V quantum wells (QW) superlattices have been grown by molecular beam epitaxy on GaP substrates for photonics applications on silicon. We first present room temperature photoluminescence (PL) results for GaAsP/GaP QWs. A detailed analysis of low temperature PL experiments is then performed. QW contribution is pointed out, and the structuration of the QW emission is attributed to LA phonon replica. A comparison with electronic bandstructure is performed, and a discussion is proposed on the nature of the observed transition (direct or indirect). Finally, it is shown that these QWs can be used as active zone in light emitters on silicon. Growth of good quality GaP epilayers on silicon is also presented. The crystalline quality of the deposited GaP near the GaP/Si interface is studied by Raman spectroscopy. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research