Growth and characterization of lattice‐matched InAlN/GaN Bragg reflectors grown by plasma‐assisted molecular beam epitaxy | Zendy

Gačević Ž. | Zendy; FernándezGarrido S. | Zendy; Calleja E. | Zendy; Luna E. | Zendy; Trampert A. | Zendy

Open Access

Growth and characterization of lattice‐matched InAlN/GaN Bragg reflectors grown by plasma‐assisted molecular beam epitaxy

Author(s) -

Gačević Ž.,

FernándezGarrido S.,

Calleja E.,

Luna E.,

Trampert A.

Publication year - 2009

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200880833

Subject(s) - molecular beam epitaxy , materials science , transmission electron microscopy , ternary operation , epitaxy , lattice (music) , lattice constant , optoelectronics , bragg's law , reflectivity , optics , diffraction , nanotechnology , layer (electronics) , physics , computer science , acoustics , programming language

We demonstrate six to ten period lattice‐matched In 0.18 Al 0.82 N/GaN distributed Bragg reflectors with peak reflectivity centred around 400 nm, grown by molecular beam epitaxy. Thanks to the well‐tuned ternary alloy composition crack‐free layers have been obtained as confirmed by both optical and scanning electron microscopy. In addition, cross‐sectional analysis by high resolution transmission electron microscopy reveals highly periodic structure with abrupt interfaces. When the number of DBRs periods increased from six to ten, peak reflectivity increased from 45% to 60%. This increase was found to be in reasonable agreement with theoretical simulations. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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