Photon‐assisted tunneling in GaN nanowire white light emitting diodes | Zendy

Yeh P.C. | Zendy; Hwa M.C. | Zendy; Yu J.W. | Zendy; Wu H.M. | Zendy; Tsai H.L. | Zendy; Lai C.M. | Zendy; Huang J.J. | Zendy; Yang J.R. | Zendy; Peng L.H. | Zendy

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Photon‐assisted tunneling in GaN nanowire white light emitting diodes

Author(s) -

Yeh P.C.,

Hwa M.C.,

Yu J.W.,

Wu H.M.,

Tsai H.L.,

Lai C.M.,

Huang J.J.,

Yang J.R.,

Peng L.H.

Publication year - 2009

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200880822

Subject(s) - electroluminescence , quantum tunnelling , optoelectronics , materials science , light emitting diode , nanowire , diode , luminescence , photon , optics , nanotechnology , physics , layer (electronics)

We reported intensive greenish white light electroluminescence, accompanied with 364 nm bandedge emission from GaN nanowires/p‐GaN light emitting diode operated in the high‐field forward bias regime. Strong bandedge emission, dominant over visible luminescence from bandgap state transitions, was also observed in the reverse bias regime. These observations were ascribed to a formation of n + ‐p tunnel junction in the high‐field regime and emission mechanism due to photon‐assisted tunneling process. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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