DC characteristics and high frequency response of GaN nanowire metal‐oxide‐semiconductor field‐effect transistor

We report selected site lateral growth of crystalline [11 $ \bar 2 $ 0] GaN nanowire (NW) with high channel mobility of 1050 cm 2 /V‐s on SiO 2 /p‐Si. This scheme enables photolithographic fabrication of top‐gated GaN NW‐MOSFET of 60 nm dia. and 2 μm gate length. Device parameters with g m of 25 μS, saturation current of 90 μA, and cut‐off frequency f T at 14 GHz have been extracted. In an active load configuration of GaN NW‐MOSFET inverter we reported voltage gain of 2 and a high current on/off ratio of 10 4 . These observations suggest promising functional diversification of the GaN NW‐MOSFET on the Si‐based CMOS platform for the sub‐50 nm technology nodes. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)