Open AccessImpacts of nano‐structures in p‐ and i‐layer on the performances of amorphous silicon solar cells
Author(s) -
Liao Xianbo,
Du Wenhui,
Cao Xinmin,
Yang Xiesen,
Xiang Xianbi,
Zhang Shibin,
Fan Qihua,
Sun Kai,
Deng Xunming
Publication year - 2009
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.200880703
Subject(s) - nanocrystalline material , silicon , nanocrystalline silicon , materials science , amorphous silicon , amorphous solid , solar cell , layer (electronics) , substrate (aquarium) , volume fraction , chemical engineering , polycrystalline silicon , crystallite , nano , degradation (telecommunications) , nanotechnology , crystalline silicon , optoelectronics , crystallography , composite material , metallurgy , chemistry , thin film transistor , electronic engineering , oceanography , geology , engineering
Fine‐grained nano‐structures were introduced in p‐ and i‐layers of n‐i‐p type hydrogenated amorphous silicon (a‐Si:H) based solar cells deposited on stainless steel substrate, and their impacts on the cell performances were characterized. It is found that the hydrogenated nanocrystalline silicon (nc‐Si:H) p‐layer with a certain nanocrystalline volume fraction leads to a higher V oc of 1.042 V. For the intrinsic layer, introducing a middle‐range ordered‐like structure and a small amount of nanosized silicon crystallites may decrease the light‐induced degradation and increase the stabilized efficiency of n‐i‐p a‐Si:H based solar cells up to 10% for single junction nano‐structured a‐Si:H solar cells with an area of 0.25 cm 2 , AM1.5, 100 mW/cm 2 . (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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