Improved luminescence efficiency of InAs quantum dots grown on atomic terraced GaAs surface prepared with in‐situ chemical etching | Zendy

Idutsu Yasuhiro | Zendy; Miyamura Souta | Zendy; Suemune Ikuo | Zendy

Open Access

Improved luminescence efficiency of InAs quantum dots grown on atomic terraced GaAs surface prepared with in‐situ chemical etching

Author(s) -

Idutsu Yasuhiro,

Miyamura Souta,

Suemune Ikuo

Publication year - 2009

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200880634

Subject(s) - quantum dot , photoluminescence , etching (microfabrication) , materials science , luminescence , in situ , optoelectronics , isotropic etching , nanotechnology , chemistry , layer (electronics) , organic chemistry

Observation of the enhanced luminescence efficiency of InAs quantum dots (QDs) grown on atomically controlled GaAs surfaces is reported. With the trisdimethylaminoarsenic (TDMAAs) in‐situ surface etching process, formation of atomic steps and terraces on GaAs surfaces were clearly observed. InAs QDs grown on the processed GaAs surfaces showed the clear dependence of QDs size, density and optical characteristics on the surface properties, i.e., the increase of the QDs height and diameter the decrease of the QDs density. About 6‐times enhancement of photoluminescence efficiency which has the peak around 1550‐nm wavelength was observed by growing InAs QDs on atomically controlled GaAs surfaces. This is due to the migration enhancement of InAs during thegrowth the QDs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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