Luminescence properties of Al x Ga 1–x N(0.4 < x < 0.5)/Al y Ga 1–y N (0.6 < y ≤ 1) quantum structures grown by gas source molecular beam epitaxy | Zendy

Nikishin S. | Zendy; Borisov B. | Zendy; Kuryatkov V. | Zendy; Song D. | Zendy; Holtz M. | Zendy; Garrett G. A. | Zendy; Sarney W. L. | Zendy; Sampath A. V. | Zendy; Shen H. | Zendy; Wraback M. | Zendy

Open Access

Luminescence properties of Al x Ga 1–x N(0.4 < x < 0.5)/Al y Ga 1–y N (0.6 < y ≤ 1) quantum structures grown by gas source molecular beam epitaxy

Author(s) -

Nikishin S.,

Borisov B.,

Kuryatkov V.,

Song D.,

Holtz M.,

Garrett G. A.,

Sarney W. L.,

Sampath A. V.,

Shen H.,

Wraback M.

Publication year - 2008

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200778699

Subject(s) - cathodoluminescence , photoluminescence , luminescence , analytical chemistry (journal) , sapphire , materials science , molecular beam epitaxy , transmission electron microscopy , quantum dot , crystallography , epitaxy , chemistry , nanotechnology , optoelectronics , laser , optics , physics , layer (electronics) , chromatography

We report structural and optical properties of Al x Ga 1–x N (0.4 < x < 0.5)/Al y Ga 1–y N (0.6 < y ≤ 1) quantum structures grown by gas source molecular beam epitaxy with ammonia on (0001) sapphire substrates. The structures are designed for light emission at ∼ 280 nm. The Al x Ga 1–x N (0.4 < x < 0.5) well material was grown under two dimensional (2D), three dimensional (3D), and (2D+3D) conditions by the varying group‐III/ammonia ratio. The formation of nanoscale islands, or quantum dots (QDs), in the wells grown in 3D and (2D+3D) modes was observed using transmission electron microscopy. Optical properties are investigated using room temperature cathodoluminescence and time‐resolved photoluminescence. Systematic studies allow us to obtain well growth conditions to produce ∼ 60 fold intensity enhancement over purely two‐dimensional structures. Under these conditions, corresponding to deposition ∼ 10 monolayers of well material, we obtain emission at ∼ 280 nm with narrowest line width and longest photoluminescence decay time. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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