Open AccessOptical properties of a ‐plane GaN strained by photo‐chemically grown gallium hydroxide
Author(s) -
Wang S.L.,
Yeh B.C.,
Wu H.M.,
Peng L.H.,
Lai C.M.,
Ko T.S.,
Lu T.C.,
Wang S.C.,
Kung A.H.
Publication year - 2008
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.200778636
Subject(s) - photoluminescence , materials science , gallium nitride , optoelectronics , passivation , gallium , luminescence , oxide , wide bandgap semiconductor , hydroxide , photochemistry , nanotechnology , layer (electronics) , chemistry , inorganic chemistry , metallurgy
We report the observation of green emission centered at 500nm, accompanied with luminescence enhancement and spectral blue shift (∼31meV) in the bandedge emission from a ‐plane grown gallium nitride (GaN) passivated with gallium hydroxide (GaOOH). From study of the photo‐current response and polarization‐resolved low‐temperature micro‐photoluminescence ( μ ‐PL) we resolved an evolution of gain competition process between the green and the UV emission bands. By dissolving the oxide we recover the emission characteristics of the as‐grown a ‐GaN. These observations can be ascribed to a formation of compressively‐strained a ‐GaN due to a coherently grown GaOOH atop layer. The latter is responsible for the spectral blue shift and the generation of acceptor like deep‐levels causing the green‐band transition in the emission and photo‐current response. Enhancement of bandedge emission from the oxide covered a ‐GaN is due to the GaOOH surface passivation effect which was prepared by the photo‐enhance wet oxidation method. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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