Open AccessA multi‐sensor study of Cl 2 etching of polycrystalline Si
Author(s) -
Klimecky Pete I.,
Terry Fred L.
Publication year - 2008
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.200777807
Subject(s) - fabrication , etching (microfabrication) , crystallite , ellipsometry , polycrystalline silicon , materials science , reproducibility , analytical chemistry (journal) , optoelectronics , volumetric flow rate , nanotechnology , chemistry , thin film , metallurgy , physics , environmental chemistry , medicine , alternative medicine , layer (electronics) , pathology , chromatography , quantum mechanics , thin film transistor
Cl 2 chemistries are the basis for etching of polycrystalline Si and other conductive gate materials in Si CMOS integrated circuit fabrication. It is now well‐known that recombination of atomic Cl neutrals on the chamber walls influences the etch rate and thus leads to manufacturing reproducibility problems. In this work, we make use of multiple real‐time measurements to improve the understanding of the physical mechanisms for this effect. In particular, real‐time spectroscopic ellipsometry is used as both a poly‐Si etch rate monitor and as a virtual SiCl 4 flow rate sensor. This aids in the quantitative interpretation of the optical emission spectroscopy data. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom