Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2  using parametric models | Zendy

Basa P. | Zendy; Petrik P. | Zendy; Fried M. | Zendy; Dâna A. | Zendy; Aydinli A. | Zendy; Foss S. | Zendy; Finstad T. G. | Zendy

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Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models

Author(s) -

Basa P.,

Petrik P.,

Fried M.,

Dâna A.,

Aydinli A.,

Foss S.,

Finstad T. G.

Publication year - 2008

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200777773

Subject(s) - nanocrystal , annealing (glass) , materials science , ellipsometry , germanium , chemical vapor deposition , dielectric , parametric statistics , semiconductor , optoelectronics , analytical chemistry (journal) , nanotechnology , chemical engineering , thin film , silicon , chemistry , composite material , organic chemistry , statistics , mathematics , engineering

Ge‐rich SiO 2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO 2 layers were formed by high temperature annealing. The samples were measured and evaluated by spectroscopic ellipsometry. Effective medium theory (EMT) and parametric semiconductor models have been used to model the dielectric function of the layers. Systematic dependences of the layer thickness and the oscillator parameters have been found on the annealing temperature (nanocrystal size). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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