Thermoluminescence and optically stimulated luminescence of gamma‐irradiated mineral zircon
Author(s) -
Secu M.,
Vainshtein D.,
Turkin A. A.,
den Hartog H. W.
Publication year - 2007
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.200673738
Subject(s) - thermoluminescence , luminescence , zircon , optically stimulated luminescence , irradiation , recombination , materials science , ion , electron , radiochemistry , mineralogy , analytical chemistry (journal) , chemistry , optoelectronics , physics , geology , geochemistry , nuclear physics , chromatography , biochemistry , organic chemistry , gene
Thermoluminescence (TL) manifested by gamma‐irradiated mineral zircon has shown a strong TL peak at about 165 °C which is due to recombination of electrons and Dy 3+ related shallow hole traps. After they have been removed by a short preheat we have observed two TL peaks at 300‐320 °C and ≈420 °C, which are mainly due to recombination of electrons and Tb 3+ related hole traps centres yielding its characteristic luminescence. The experimental results indicate that optically stimulated luminescence (OSL) is due to luminescent emission of Tb 3+ ions and [SiO 4 ] 4– groups. The deep traps related to the 420 °C TL peak contribute to the Tb 3+ related OSL. The deep traps related to the 300‐320 °C TL peak contribute to OSL associated with the luminescent emission of [SiO 4 ] 4– groups. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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