Elements of nanocrystal high‐field carrier transport modeling | Zendy

Sevik C. | Zendy; Bulutay C. | Zendy

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Elements of nanocrystal high‐field carrier transport modeling

Author(s) -

Sevik C.,

Bulutay C.

Publication year - 2007

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200673327

Subject(s) - pseudopotential , nanocrystal , auger , ab initio , band gap , materials science , solar cell , semiconductor , oxide , field (mathematics) , electronic band structure , fermi level , monte carlo method , impact ionization , nanotechnology , ionization , chemical physics , condensed matter physics , physics , atomic physics , optoelectronics , quantum mechanics , ion , statistics , mathematics , pure mathematics , metallurgy , electron

Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high‐field transport in NCs. This requires the combination of a number of tools: ensemble Monte Carlo carrier transport simulation, ab initio band structure of the bulk oxide, Fermi's golden rule modeling of impact ionization and Auger processes and the pseudopotential‐based atomistic description of the confined NC states. These elements are outlined in this brief report. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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