Open AccessBipolariton laser emission from a GaAs microcavity
Author(s) -
Moreira L. M.,
Gonzalez J. C.,
Oliveira A. G.,
Matinaga F. M.
Publication year - 2007
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.200673305
Subject(s) - polariton , laser , photoluminescence , quantum well , emission intensity , optoelectronics , excitation , biexciton , exciton , polarization (electrochemistry) , planar , resonance (particle physics) , materials science , atomic physics , physics , optics , condensed matter physics , chemistry , computer graphics (images) , quantum mechanics , computer science
Biexciton emission properties were studied in a single GaAs quantum well (QW) semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower polariton mode. This new mode appears when we detune the cavity resonance out of the lower polariton branch, showing a laser like behavior. Very small linewidths were measured, lying below 110 µeV and 150 µeV for polariton and bipolariton emission respectively. The input/output power (I/O) measurements show that the bipolariton emission has a weaker coupling efficiency compared to previous results for polariton emission. Varying the pump laser polarization, we were able to show the selection rules for the biexciton particle creation in the quantum well. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)