Open AccessSpin‐dependent tunneling in modulated structures of (Ga,Mn)As
Author(s) -
Sankowski P.,
Kacman P.,
Majewski J. A.,
Dietl T.
Publication year - 2007
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.200673220
Subject(s) - quantum tunnelling , condensed matter physics , magnetoresistance , anisotropy , spin polarized scanning tunneling microscopy , diode , materials science , physics , scanning tunneling spectroscopy , quantum mechanics , magnetic field
The spin‐dependent tunneling in layered structures based on (Ga,Mn)As, in particular the dependence of the tunneling current on magnetization direction, is studied theoretically. To capture the complexity of the tunneling effects in these semiconductor devices we combine a multi‐orbital tight‐binding approach with Landauer‐Büttiker formalism. This theory allows us to reproduce the tunneling anisotropic magnetoresistance effects observed in (Ga,Mn)As/GaAs Esaki‐Zener diodes. The model is also used to describe the in‐plane and out‐of‐plane anisotropy of tunneling magnetoresistance in (Ga,Mn)As‐based trilayers. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)