Open AccessAMR and magnetometry studies of ultra thin GaMnAs films
Author(s) -
Rushforth A. W.,
Giddings A. D.,
Edmonds K. W.,
Campion R. P.,
Foxon C. T.,
Gallagher B. L.
Publication year - 2007
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.200672836
Subject(s) - library science , physics , engineering physics , geography , computer science
Abstract We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm) Ga 0.95 Mn 0.05 As films. We find that the sign of the AMR can be positive or negative, which may depend on the direction of the current with respect to the crystal. At low temperatures, transport measurements and SQUID magnetometry suggest that the magnetisation has a component pointing out of the plane of the film. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)