Interlayer exchange coupling in (Ga,Mn)As based multilayers | Zendy

Giddings A. D. | Zendy; Jungwirth T. | Zendy; Gallagher B. L. | Zendy

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Interlayer exchange coupling in (Ga,Mn)As based multilayers

Author(s) -

Giddings A. D.,

Jungwirth T.,

Gallagher B. L.

Publication year - 2007

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200672834

Subject(s) - antiferromagnetism , ferromagnetism , condensed matter physics , giant magnetoresistance , materials science , coupling (piping) , magnetoresistance , yield (engineering) , magnetic semiconductor , semiconductor , metal , magnetic field , optoelectronics , physics , metallurgy , quantum mechanics

Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean‐field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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