Open AccessHalf‐metallic diluted antiferromagnetic semiconductors
Author(s) -
Ogura M.,
Hashimoto Y.,
Akai H.
Publication year - 2007
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.200672802
Subject(s) - antiferromagnetism , chalcopyrite , semiconductor , metal , doping , materials science , transition metal , condensed matter physics , crystallography , chemistry , copper , metallurgy , optoelectronics , physics , biochemistry , catalysis
The possibility of half‐metallic diluted antiferromagnetic semiconductors of chalcopyrite‐type structure codoped with 3 d transition metal ions are investigated on the basis of first‐principles electronic structure calculation. It is found that AgGaS 2 and CuAlS 2 co‐doped with V‐Co, Cr‐Fe, Cr‐Co, and V‐Fe might be good candidates for half‐metallic antiferromagnets. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)