Half‐metallic diluted antiferromagnetic semiconductors | Zendy

Ogura M. | Zendy; Hashimoto Y. | Zendy; Akai H. | Zendy

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Half‐metallic diluted antiferromagnetic semiconductors

Author(s) -

Ogura M.,

Hashimoto Y.,

Akai H.

Publication year - 2007

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200672802

Subject(s) - antiferromagnetism , chalcopyrite , semiconductor , metal , doping , materials science , transition metal , condensed matter physics , crystallography , chemistry , copper , metallurgy , optoelectronics , physics , biochemistry , catalysis

The possibility of half‐metallic diluted antiferromagnetic semiconductors of chalcopyrite‐type structure codoped with 3 d transition metal ions are investigated on the basis of first‐principles electronic structure calculation. It is found that AgGaS 2 and CuAlS 2 co‐doped with V‐Co, Cr‐Fe, Cr‐Co, and V‐Fe might be good candidates for half‐metallic antiferromagnets. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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