Open AccessElectronic and spin properties of hole point contacts
Author(s) -
Zülicke U.
Publication year - 2007
Publication title -
physica status solidi c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1862-6351
DOI - 10.1002/pssc.200672801
Subject(s) - condensed matter physics , zeeman effect , anisotropy , heterojunction , physics , semiconductor , electron , spin (aerodynamics) , spectroscopy , valence band , band gap , quantum mechanics , magnetic field , thermodynamics
We have studied theoretically the effect of a tuneable lateral confinement on two‐dimensional hole systems realised in III‐V semiconductor heterostructures. Based on the 4 × 4 Luttinger description of the valence band, we have calculated quasi‐onedimensional (quasi‐1D) hole subband energies and anisotropic Landé g ‐factors. Confinement‐induced band mixing results in the possibility to manipulate electronic and spin properties of quasi‐1D hole states over a much wider range than is typically possible for confined conduction‐band electrons. Our results are relevant for recent experiments where source‐drain‐bias spectroscopy was used to measure Zeeman splitting of holes in p‐type quantum point contacts. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)