Evidence for excitonic polarons in InAs/GaAs quantum dots | Zendy

Preisler V. | Zendy; Grange T. | Zendy; Ferreira R. | Zendy; de Vaulchier L. A. | Zendy; Guldner Y. | Zendy; Teran F. J. | Zendy; Potemski M. | Zendy; Lemaître A. | Zendy

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Evidence for excitonic polarons in InAs/GaAs quantum dots

Author(s) -

Preisler V.,

Grange T.,

Ferreira R.,

de Vaulchier L. A.,

Guldner Y.,

Teran F. J.,

Potemski M.,

Lemaître A.

Publication year - 2006

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200671591

Subject(s) - polaron , exciton , condensed matter physics , phonon , hamiltonian (control theory) , quantum dot , photoluminescence , spectroscopy , excitation , physics , biexciton , coupling (piping) , quantum mechanics , materials science , electron , optoelectronics , mathematical optimization , mathematics , metallurgy

We investigate the interband transitions in several ensembles of self‐assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. Astrong anticrossing between two transitions is observed in all samples, which cannot be accounted for by a purely excitonic model. The coupling between the mixed exciton‐LO phonon states is calculated using the Fröhlich Hamiltonian. The excitonic polaron energies as well as the oscillator strengths of the interband transitions are determined. An anticrossing is predicted when two exciton‐LO phonon states have close enough energies with phonon occupations which differ by one. Agood agreement is found between the calculations and the experimental data evidencing the existence of excitonic polarons. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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