Optical characterization of GaN microcavity fabricated by wet etching | Zendy

Lu C.Y. | Zendy; Wang S.L. | Zendy; Wu H.M. | Zendy; Peng L.H. | Zendy

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Optical characterization of GaN microcavity fabricated by wet etching

Author(s) -

Lu C.Y.,

Wang S.L.,

Wu H.M.,

Peng L.H.

Publication year - 2006

Publication title -

physica status solidi c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1862-6351

DOI - 10.1002/pssc.200565339

Subject(s) - materials science , gallium nitride , whispering gallery wave , etching (microfabrication) , optoelectronics , hexagonal crystal system , laser , gallium , nitride , characterization (materials science) , resonance (particle physics) , emission intensity , intensity (physics) , whispering gallery , optics , luminescence , nanotechnology , resonator , chemistry , crystallography , layer (electronics) , physics , particle physics , metallurgy

We report a novel technique to fabricate gallium nitride (GaN) microcavities by combining the methods of photo‐enhanced wet chemical oxidation and crystallographic etching. Such GaN microcavities exhibit mirror‐like vertical facets composing of {1100}GaN and various gemoetry of hexagonal, trigonal and cylindrical shapes. The emission spectra of the GaN micro‐cavities are found in resonance with the whispering gallery (WG) modes when pumped with a 266 nm Nd:YAG laser. The signatures of GaN microcavities were further characterized by an increase of the WG mode spacing with the reduced device size and suppression of the side mode emission intensity with pump intensity. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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