Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition | Zendy

Feng Z. C. | Zendy; Liu W. | Zendy; Chua S. J. | Zendy; Chen J. H. | Zendy; Yang C. C. | Zendy; Lu W. | Zendy; Collins W. E. | Zendy

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Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition

Author(s) -

Feng Z. C.,

Liu W.,

Chua S. J.,

Chen J. H.,

Yang C. C.,

Lu W.,

Collins W. E.

Publication year - 2005

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200461496

Subject(s) - chemical vapor deposition , photoluminescence , quantum well , sapphire , excitation , blueshift , chemistry , metalorganic vapour phase epitaxy , materials science , optoelectronics , condensed matter physics , nanotechnology , physics , laser , optics , epitaxy , quantum mechanics , layer (electronics)

A series of InGaN/GaN multiple quantum wells with different well thicknesses were grown on sapphire by metal organic chemical vapor deposition, and investigated by excitation power density dependent photoluminescence (PL). With increasing excitation power density, the PL peak position showed a blue shift followed by a red shift. It is believed that a screened quantum‐confined Stark effect is responsible for the blue shift and the band gap renormalization due to the many body effect is responsible for the red shift. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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